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| ST173SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 175 A FEATURES * All diffused design * Center amplifying gate * Guaranteed high dV/dt * Guaranteed high dI/dt * High surge current capability TO-209AB (TO-93) RoHS COMPLIANT * Low thermal impedance * High speed performance * Compression bonding * Lead (Pb)-free * Designed and qualified for industrial level PRODUCT SUMMARY IT(AV) 175 A TYPICAL APPLICATIONS * Inverters * Choppers * Induction heating * All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IT(RMS) ITSM I2 t VDRM/VRRM tq TJ Range 50 Hz 60 Hz 50 Hz 60 Hz TEST CONDITIONS VALUES 175 TC 85 275 4680 4900 110 100 1000 to 1200 15 to 25 - 40 to 125 kA2s V s C A UNITS A C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 10 12 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 1100 1300 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 40 ST173S Document Number: 94367 Revision: 29-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST173SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 175 A CURRENT CARRYING CAPABILITY ITM 180 el 180 el ITM 100 s ITM FREQUENCY UNITS 50 Hz 400 Hz 1000 Hz 2500 Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dI/dt Case temperature Equivalent values for RC circuit 500 450 330 170 50 VDRM 50 60 47/0.22 320 290 190 80 790 810 760 510 50 VDRM - 550 540 490 300 4510 1970 1050 480 50 VDRM - 3310 1350 680 280 V A/s 85 47/0.22 C /F A 85 60 47/0.22 85 60 ON-STATE CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave DC at 75 C case temperature t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VTM VT(TO)1 VT(TO)2 rt1 rt2 IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 175 85 275 4680 4900 3940 Sinusoidal half wave, initial TJ = TJ maximum 4120 110 100 77 71 1100 2.07 1.55 1.58 0.87 0.82 600 1000 m mA V kA2s kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum TJ = 25 C, IT > 30 A TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A Maximum peak on-state voltage Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned on current Typical delay time minimum Maximum turn-off time maximum www.vishay.com 2 tq SYMBOL dI/dt td TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/s VR = 50 V, tp = 500 s, dV/dt: See table in device code VALUES 1000 1.1 15 25 s UNITS A/s For technical questions, contact: ind-modules@vishay.com Document Number: 94367 Revision: 29-Apr-08 ST173SPbF Series Inverter Grade Thyristors (Stud Version), 175 A BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum, linear to 80 % VDRM, higher value available on request TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 40 UNITS V/s mA Vishay High Power Products TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Maximum DC gate currrent required to trigger Maximum DC gate voltage required to trigger Maximum DC gate current not to trigger Maximum DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT IGD VGD TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 60 10 10 20 5 200 3 20 0.25 UNITS W A V mA V mA V TJ = TJ maximum, rated VDRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Non-lubricated threads Mounting torque, 10 % Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.105 0.04 31 (275) 24.5 (210) 280 UNITS C K/W N*m (lbf * in) g TO-209AB (TO-93) RthJC CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION 0.016 0.019 0.025 0.036 0.060 RECTANGULAR CONDUCTION 0.012 0.020 0.027 0.037 0.060 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94367 Revision: 29-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST173SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 175 A 130 ST173S Series RthJC (DC) = 0.105 K/W 130 120 110 O ST173S Series RthJC (DC) = 0.105 K/W Maximum Allowable Case Temperature (C) 110 O Conduction angle 100 30 C 60 C 90 C 180 C 120 C 80 0 20 40 60 80 100 120 140 160 180 Maximum Allowable Case Temperature (C) 120 100 90 90 80 70 0 40 80 120 30 60 120 Conduction period 90 180 DC 160 200 240 280 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Average On-State Current (A) Fig. 2 - Current Ratings Characteristics 350 350 0. Maximum Average On-State Power Loss (W) Maximum Average On-State Power Loss (W) 300 250 200 150 180 120 90 60 30 R th 1 300 250 200 150 100 50 0 0. 16 0.2 K/W K/ W K/ W SA = 0. 08 K/ RMS limit W 0.3 R - O 100 50 0 0 20 40 60 80 Conduction angle ST173S Series TJ = 125 C 100 120 140 160 180 K/W 0.4 K/W 0.5 K/W 0.8 K /W 1.2 K/W 25 50 75 100 125 Average On-State Current (A) Maximum Allowable Ambient Temperature (C) Fig. 3 - On-State Power Loss Characteristics 500 120 500 30 90 60 180 DC Maximum Average On-State Power Loss (W) Maximum Average On-State Power Loss (W) 400 400 R th SA = W 0.1 0. 8 300 RMS limit O 300 200 200 Conduction period 100 ST173S Series TJ = 125 C 0 0 40 80 120 160 200 240 280 100 0.1 6 0.2 K/W K/W 0.3 K/W 0.4 K 0.5 K /W /W 0.8 K/W 1.2 K/W K/ K/ W - R 0 25 50 75 100 125 Average On-State Current (A) Maximum Allowable Ambient Temperature (C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94367 Revision: 29-Apr-08 ST173SPbF Series Inverter Grade Thyristors (Stud Version), 175 A 4500 1 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Steady state value RthJC = 0.105 K/W (DC operation) 0.1 Vishay High Power Products Peak Half Sine Wave On-State Current (A) 4000 3500 3000 Transient Thermal Impedance ZthJC (K/W) 0.01 ST173S Series 2500 ST173S Series 2000 1 10 100 0.001 0.001 0.01 0.1 1 10 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics 5000 4500 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied 250 ST173S Series TJ = 125 C Qrr - Maximum Reverse Recovery Charge (C) Peak Half Sine Wave On-State Current (A) 200 4000 3500 3000 2500 2000 1500 0.01 ST173S Series A 00 =5 A I TM 00 =3 I TM 0A = 20 I TM I TM = 100 A 150 100 ITM = 50 A 50 0 0.1 1 0 20 40 60 80 100 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current dI/dt - Rate of Fall of On-State Current (A/s) Fig. 9 - Reverse Recovered Current Characteristics Instantaneous On-State Current (A) 10 000 ST173S Series 160 140 ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A ITM = 50 A Irr - Maximum Reverse Recovery Current (A) 120 100 80 60 40 20 1000 TJ = 125 C TJ = 25 C ST173S Series TJ = 125 C 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0 20 40 60 80 100 Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics dI/dt - Rate of Fall of On-State Current (A/s) Fig. 10 - Reverse Recovery Current Characteristics Document Number: 94367 Revision: 29-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST173SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 175 A 10 000 Peak On-State Current (A) 1000 2000 2500 3000 1000 1500 200 500 400 100 50 Hz Peak On-State Current (A) Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 1000 1000 1500 2000 2500 3000 100 500 400 200 50 Hz tp ST173S Series Sinusoidal pulse TC = 60 C 1000 10 000 tp ST173S Series Sinusoidal pulse TC = 85 C 1000 10 000 100 10 100 100 10 100 Pulse Basewidth (s) Fig. 11 - Frequency Characteristics Pulse Basewidth (s) 10 000 10 000 Peak On-State Current (A) 1000 1500 2500 3000 500 Peak On-State Current (A) Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 50 Hz 400 200 100 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 500 1500 50 Hz 200 100 1000 400 1000 2000 1000 2000 100 5000 100 2500 tp ST173S Series Trapezoidal pulse TC = 60 C dI/dt = 50 A/s 1000 10 000 3000 5000 tp ST173S Series Trapezoidal pulse TC = 85 C dI/dt = 50 A/s 1000 10 000 10 10 100 10 10 100 Pulse Basewidth (s) Fig. 12 - Frequency Characteristics Pulse Basewidth (s) 10 000 Peak On-State Current (A) 1000 500 400 200 50 Hz 100 Peak On-State Current (A) Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 100 50 Hz 1000 500 1000 1500 2500 5000 10 000 400 200 100 5000 10 000 2000 2500 1000 1500 100 2000 tp ST173S Series Trapezoidal pulse TC = 60 C dI/dt = 100 A/s 1000 10 000 tp ST173S Series Trapezoidal pulse TC = 85 C dI/dt = 100 A/s 1000 10 000 10 10 100 10 10 100 Pulse Basewidth (s) Fig. 13 - Frequency Characteristics Pulse Basewidth (s) www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94367 Revision: 29-Apr-08 ST173SPbF Series Inverter Grade Thyristors (Stud Version), 175 A 100 000 100 000 Vishay High Power Products Peak On-State Current (A) Peak On-State Current (A) tp ST173S Series Rectangular pulse dI/dt = 50 A/s 10 000 4 2 1 7.5 20 joules per pulse 10 000 20 joules per pulse 1000 0.5 0.3 0.2 0.1 1000 1 0.4 0.5 0.3 0.2 0.1 5 10 23 100 ST173S Series Sinusoidal pulse tp 100 10 10 100 1000 10 000 10 10 100 1000 10 000 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 14 - Maximum On-State Energy Power Loss Characteristics 100 Instantaneous Gate Voltage (V) 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 ; tr 1 s b) Recommended load line for 30 % rated dI/dt: 10 V, 10 tr 1 s (a) (b) TJ = 40 C (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms TJ = 25 C TJ = 125 C 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: ST173S Series 0.1 1 Frequency limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics Document Number: 94367 Revision: 29-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 ST173SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 175 A ORDERING INFORMATION TABLE Device code ST 1 1 2 3 4 5 6 7 8 9 17 2 - 3 3 S 4 12 5 P 6 F 7 K 8 0 9 10 PbF 11 Thyristor Essential part number 3 = Fast turn-off S = Compression bonding stud Voltage code x 100 = VRRM (see Voltage Ratings table) P = Stud base 3/4" 16UNF-2A M = Stud base metric threads M16 x 1.5 Reapplied dV/dt code (for tq test condition) tq code 0 = Eyelet terminals (gate and aux. cathode leads) 1 = Fast-on terminals (gate and aux. cathode leads) dV/dt - tq combinations available dV/dt (V/s) 15 18 tq (s) 20 25 30 20 CL CP CK CJ 50 DP DK DJ DH 100 EP EK EJ EH 200 FP* FK* FJ FH 400 HK HJ HH * Standard part number. All other types available only on request. 2 = Flag terminals (for cathode and gate terminals) 10 - 11 - Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection) Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95079 www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 94367 Revision: 29-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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